A new silicon carbide (SiC) module built around 1,200 V MOSFETs targets demanding applications requiring bidirectional power flow or a broader range of control. That includes solar inverters as well ...
SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
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